s m d ty p e w w w . k e x i n . c o m . c n 1 m os f e t p - ch an n el m osf et 2s j319s f e a tu r e s v d s ( v ) = - 2 0 0 v i d = - 3 a ( v g s = - 1 0 v ) r d s ( o n ) 2 . 3 ( v g s = - 1 0 v ) h i g h s p e e d s w i t c h i n g l o w d r i v e c u r r e n t a b s o l u te m a x i m u m ra ti n g s t a = 2 5 p a r a m e t e r s y m b o l r a t i n g u n i t d r a i n - s o u r c e v o l t a g e v d s - 2 0 0 g a t e - s o u r c e v o l t a g e v g s 2 0 c o n t i n u o u s d r a i n c u r r e n t i d - 3 p u l s e d d r a i n c u r r e n t n o t e . 1 ) i d m - 1 2 b o d y t o d r a i n d i o d e r e v e r s e d r a i n c u r r e n t i d r - 3 p o w e r d i s s i p a t i o n t c = 2 5 p d 2 0 w j u n c t i o n t e m p e r a t u r e t j 1 5 0 j u n c t i o n s t o r a g e t e m p e r a t u r e r a n g e t st g - 5 5 t o 1 5 0 v a n o t e . 1 : p w 1 0 m s , d u t y c y c l e 1 % e l e c tr i c a l ch a r a c te r i s ti c s t a = 2 5 p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = - 10m a , v g s = 0 v - 2 0 0 g a t e t o s o u r c e b r e a k d o w n v o l t a g e v g s s i g = 1 0 0 a , v d s = 0 v 2 0 z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s v d s = - 1 6 0 v , v g s = 0 v - 1 0 0 u a g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 1 6 v 1 0 u a g a t e t o s o u r c e c u t o f f v o l t a g e v g s ( o f f ) v g s = - 1 0 v i d = - 1 m a - 2 - 4 v s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e r d s ( o n ) v g s = - 1 0 v , i d = - 2 a 2 . 3 f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = - 1 0 v , i d = - 2 a 1 1 . 7 s i n p u t c a p a c i t a n c e c i ss 3 3 0 o u t p u t c a p a c i t a n c e c o ss 1 3 0 r e v e r s e t r a n s f e r c a p a c i t a n c e c r ss 2 5 t u r n - o n d e l a y t i m e t d ( o n ) 1 0 t u r n - o n r i s e t i m e t r 3 0 t u r n - o f f d e l a y t i m e t d ( o f f ) 4 0 t u r n - o f f f a l l t i m e t f 3 0 b o d y d i o d e r e v e r s e r e c o v e r y t i m e t r r i f = - 3 a , v g s = 0 , d i / d t = 5 0 a / s 1 8 0 d i o d e f o r w a r d v o l t a g e v s d i s = - 3 a , v g s = 0 v - 1 . 1 5 v p f v n s v g s = - 1 0 v , i d = - 2 a , r l = 1 5 v g s = 0 v , v d s = - 1 0 v , f = 1 m h z d g s 2 . 3 0 . 6 0 + 0 . 1 - 0 . 1 6 . 5 0 + 0 . 1 5 - 0 . 1 5 1 . 5 0 + 0 . 1 5 - 0 . 1 5 0 . 8 0 + 0 . 1 - 0 . 1 4 . 6 0 + 0 . 1 5 - 0 . 1 5 0 . 5 0 + 0 . 1 5 - 0 . 1 5 9 . 7 0 + 0 . 2 - 0 . 2 5 . 3 0 + 0 . 2 - 0 . 2 2 . 3 0 + 0 . 1 - 0 . 1 0 . 5 0 + 0 . 8 - 0 . 7 5 . 5 5 + 0 . 1 5 - 0 . 1 5 2 . 6 5 + 0 . 2 5 - 0 . 1 1 . 5 0 + 0 . 2 8 - 0 . 1 0 . 1 2 7 m a x 3 . 8 0 to-252 u n i t : m m 4 1 gate 2 drain 3 source 4 drain
s m d ty p e w w w . kexin . com . c n 2 m osfe t p - ch an n el m osf et 2s j319s t y p i c a l ch a r a c te r i s i ti c s 20 15 10 5 0 channel dissipation pch (w) 50 100 150 200 case temperature tc ( b c) power vs. temperature derating ?50 drain to source voltage v (v) ds drain current i (a) d maximum safe operation area ?30 ?10 ?3 ?1 ?0.3 ?0.1 ?0.05 ?1 ?3 ?10 ?30 ?100 ?300 ?500 100 s pw = 10 ms (1shot) operation in this area is limited by r ds(on) 10 s ta = 25 c 1 ms dc operation (tc = 25 c) ?5 ?4 ?3 ?2 ?1 0 ?4 ?8 ?12 ?16 ?20 drain to source voltage v (v) ds drain current i (a) d pulse test typical output characteristics ?10 v ?8 v ?6 v ?5 v ?4 v v = ?3.5 v gs ?5 ?4 ?3 ?2 ?1 0 ?2 ?4 ?6 ?8 ?10 gate to source voltage v (v) gs drain current i (a) d v = ?10 v pulse test ds 75 c typical transfer characteristics tc = ?25 c 25 c ?20 ?16 ?12 ?8 ?4 0 ?4 ?8 12 ?16 ?20 gate to source voltage v (v) gs ?1 a ?2 a pulse test d i = ?5 a drain to source saturation voltage vs. gate to source voltage v (v) ds(on) drain to source saturation voltage drain current i (a) d drain to source on state resistance r ( ) ? ds(on) static drain to source on state resistance vs. drain current 10 5 2 1 0.5 0.2 0.1 ?0.2 ?0.5 ?1 ?2 ?5 ?10 v = ?10 v pulse test gs
s m d ty p e w w w . k e x i n . c o m . c n 3 m osf e t p - ch an n el m osf et 2s j319s t y p i c a l ch a r a c te r i s i ti c s 5 4 3 2 1 ?40 0 40 80 120 160 case temperature tc (c) 0 r ( ) ds(on) static drain to source on state resistance ? ?2 a ?1 a i = ?5 a d static drain to source on state resistance vs. temperature v = ?10 v pulse test gs drain current i (a) d forward transfer admittance |y | (s) fs forward transfer admittance vs. drain current 3 2 1 0.5 0.2 0.1 ?0.05 ?0.1 ?0.2 ?0.5 ?1 ?2 ?5 ?10 tc = ?25 c 25 c 75 c v = ?10 v pulse test ds 5 10 500 200 100 50 20 reverse drain current i (a) dr reverse recovery time trr (ns) body?drain diode reverse recovery time ?0.05 ?0.1 ?0.2 ?0.5 ?1 ?2 ?5 di/dt = 50 a/ s, v = 0 duty < 1 %, ta = 25 c gs 0 ?10 ?20 ?30 -40 ?50 capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage 1000 200 500 100 50 20 10 5 ciss coss crss v = 0 f = 1 mhz gs 0 ?100 ?200 ?300 ?400 0 4 8 12 16 20 gate charge qg (nc) drain to source voltage v (v) ds 0 ?4 ?8 ?12 ?16 ?20 ?500 gate to source voltage v (v) gs dynamic input characteristics gs v ds v v = ?50 v ?100 v ?150 v dd v dd = ?150 v ?100 v ?50 v 500 200 100 50 20 10 5 ?10 drain current i (a) d switching time t (ns) switching characteristics ?0.05 ?0.1 ?0.2 ?0.5 ?1 ?2 ?5 t f r t d(off) t d(on) t v = ?10 v, v = ?30 v duty < 1 %, pw = 2 s gs dd
s m d ty p e w w w . k exi n . co m . c n 4 m osfe t . p - ch an n el m osf et 2s j319s t y p i c a l ch a r a c te r i s i ti c s ?5 ?4 ?3 ?2 ?1 0 ?0.4 ?0.8 ?1.2 ?1.6 ?2 source to drain voltage v (v) sd pulse test ?10 v v = 0, 5 v gs reverse drain current i (a) dr reverse drain current vs. source to drain voltage 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m pulse width pw (s) normalized transient thermal impedance 100 m 1 10 s (t) dm p pw t d = pw t ch C c(t) = s (t) ? ch C c ch ? c = 6.25 c/w, tc = 25 c d = 1 0.5 0.2 0.01 0.02 0.1 0.05 1 shot pulse tc = 25c normalized transient thermal impedance vs. pulse width
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